Product Detail
Silicon carbide resistance heating crystal growth furnace
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Silicon carbide resistance heating crystal growth furnace

Type:Silicon carbide equipment
Development:Development Centers
Detailed introduction

Parameter attribute

Model: PVT-RSMF-36;

Size: Length × Width × Height of whole machine = 2800×1350×3660mm;

Inner diameter of furnace: 900mm;

Ultimate vacuum; 6 x 10-4 Pa (1.5h after the molecular pump starts)

Cavity pressure rise rate: ≤5Pa/12 h (after calcining)

Lifting stroke of crucible shaft: 100mm;

Stroke of upper furnace chamber: 1100mm;

Rotate speed of crucible shaft: 0.05-5rpm;

Heating mode: Resistance or induction heating

Maximum furnace temperature: 2500℃

Standard heating power supply: 50kW+20kW

Temperature measurement method: Two-color infrared temperature measurement;

Temperature range: 900-3000℃;

Temperature accuracy: ±1℃

Pressure range: 1-700mbar;

Pressure accuracy: 1-10mbanr, ±0.5%F.S



Optional: Double temperature measuring points, multiple heaters.


The equipment can be arranged in parallel to improve the utilization rate of the plant;

Compatible with resistance or induction heating field.

It can be provided with multiple heaters and controlled independently. The process debugging window is large, and the heaters are independently controlled, which is convenient for simultaneous control of axial and radial temperature gradients;

Bottom water-cooled crucible shaft is fitted with hollow temperature measuring hole. The top, bottom, and side can be equipped with infrared temperature measurement, which is convenient for temperature field monitoring and process debugging;

Optional constant power, constant current, constant temperature working mode;

Meet the needs of 6'' -8'' semi-insulating/conducting crystal growth;

With crucible rotation function, with precision of 0.01rpm, which is convenient to create a uniform temperature environment in the radial direction to meet the growth of thick crystals;

PVT-RS-40 silicon carbide resistive crystal growth furnace is suitable for growing high-quality 6''-8'' silicon carbide single crystal, high-purity silicon carbide raw material synthesis, crystal annealing and other fields;

High-precision butterfly valve and mass flow meter are used to control the grown crystal pressure in the furnace to provide stable grown crystal atmosphere;

Loading mode: Top loading, easy and safe operation.


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