Product Detail
Crystal growth furnace KX320(A)MCZ
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Crystal growth furnace KX320(A)MCZ

Type:Silicon (germanium) - based semiconductors
Detailed introduction

Parameter attribute

Model: KX320(A)MCZ;

Inner diameter of furnace: φ1275mm;

Inner diameter of auxiliary room: φ400mm

Height of auxiliary room: 3500 ~4500mm customizable;

Diameter of throat: φ400mm;

Lift speed of seed crystal: 0~508mm/hr or ± 0.25 mm/hr, whichever is faster;

Lift speed of seed crystal (rated): 400mm/min

Seed rotation speed and precision: 0~30 RPM±1%S.P, or ±0.05RPM, whichever is faster

Crucible lifting speed and accuracy: 0-127 mm/hr ± 1% S.P,or ± 0.25 mm/hr, whichever is faster;

Lift speed of crucible (rated): 127mm/min

Crucible lifting rotate speed and accuracy: 0-20 RPM ± 1% S.P, or± 0.03 RPM, whichever is faster;

Power type: IGBT, with optional harmonic control function;

Filtering tank: Optional configurations such as self-cleaning type and two parallel installations;

Main pump: Dry vacuum pump (variable frequency), auxiliary pump: Oil pump/multi-split dry vacuum pump;

Magnetic field range: Drawing diameter ≤ 8'', optional CUSP magnetic field; draw 8''-12'' crystal, optional superconducting magnetic field;

Drawable crystal diameter: up to 12'';

Drawable crystal type: N type/P type;

Thermal field size: 32'';

Loading capacity: 440kg.


Application: Light doping, magnetic control;

Cavity material: Inner layer: Imported 316L stainless steel, outer layer: 304L stainless steel;

Chamber cleanliness: The mirror surface is precisely polished, suitable for the growth of heavily doped and lightly doped silicon single crystals;

Excellent rigidity performance of the machine;

Vibration and cooling water turbulence isolation technology caused by moving parts;

Shielding gas intake: 1) One each inside and outside the water cooling jacket, 2) one at the top of the auxiliary furnace room;

Application of high-precision gas mass flowmeter + imported vacuum gauge + high-precision butterfly valve, gas mass flowmeter: Flow accuracy: ± 0.2% F.S; pressure accuracy: ± 0.5%;

Parallel double tank online automatic switching, gas purging online cleaning system;

Imported load cell: Accurary +/- 0.5kg;

Increase camera temperature measurement and temperature adjustment functions (visual diameter measurement, liquid level measurement and temperature measurement);

The dynamic data of the relative position of the liquid surface and the guide cylinder is collected and recorded throughout the process;

Alarm and safety protection: Abnormal drop in liquid level, abnormal temperature at the evacuation port, abnormal pressure in the furnace, overtemperature of cooling water, power failure;

The crystal pulling processes such as crystal pulling broken edge remelting and silicon material reinvestment can be completed automatically;

Constant pulling speed equal diameter control;

Neck automatic preheating, welding and temperature adjustment;

Self-verification of the whole machine, thermal field and crystal growth process technology verification, and basic thermal field and crystal growth process;

Leaing CCz system, crystal growth process and control technology.

Lead time

90 days after advance payment of main equipment (auxiliary equipment and important auxiliary materials depend on market conditions)